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Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array
https://repo.qst.go.jp/records/76297
https://repo.qst.go.jp/records/762976f25d289-c875-463e-a986-d264caf9e490
| 名前 / ファイル | ライセンス | アクション |
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Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array.pdf (1.2 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2019-07-18 | |||||
| タイトル | ||||||
| タイトル | Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Takeuchi, Kozo
× Takeuchi, Kozo× Sakamoto, Toshitsugu× Tada, Munehiro× Takeyama, Akinori× Ohshima, Takeshi× Kuboyama, Satoshi× Shindo, Hiroyuki× Takeyama, Akinori× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Single-event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal–oxide–semiconductor (CMOS) are investigated with both heavy-ion and pulsed laser irradiation. In the evaluation of an AS-based field-programmable gate array (AS-FPGA), ASs show immunity against the irradiation and there is no change of the state of ASs both in a crossbar switch and memory in lookup tables (LUTs). ASs are not supposed to make any single-event transient (SET) noise when the ions hit. However, the CMOS layer shows SETs, and new approaches are proposed to solve the SET in CMOS, especially for AS-FPGA application. |
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| 書誌情報 |
IEEE TRANSACTIONS ON NUCLEAR SCIENCE 巻 66, 号 7, p. 1355-1360, 発行日 2019-07 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0018-9499 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/TNS.2019.2923013 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://ieeexplore.ieee.org/document/8736829 | |||||
