{"created":"2023-05-15T14:56:10.723827+00:00","id":76297,"links":{},"metadata":{"_buckets":{"deposit":"fc6d599c-8618-4396-93f4-e1db854ed802"},"_deposit":{"created_by":1,"id":"76297","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76297"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076297","sets":["1"]},"author_link":["773907","773910","773909","773912","773911","773908","773914","773913","773906"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"1360","bibliographicPageStart":"1355","bibliographicVolumeNumber":"66","bibliographic_titles":[{"bibliographic_title":"IEEE TRANSACTIONS ON NUCLEAR SCIENCE"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Single-event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal–oxide–semiconductor (CMOS) are investigated with both heavy-ion and pulsed laser irradiation. In the evaluation of an AS-based field-programmable gate array (AS-FPGA), ASs show immunity against the irradiation and there is no change of the state of ASs both in a crossbar\nswitch and memory in lookup tables (LUTs). ASs are not supposed to make any single-event transient (SET) noise when the ions hit. However, the CMOS layer shows SETs, and new approaches are proposed to solve the SET in CMOS, especially for AS-FPGA application.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/TNS.2019.2923013","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://ieeexplore.ieee.org/document/8736829","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0018-9499","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takeuchi, Kozo"}],"nameIdentifiers":[{"nameIdentifier":"773906","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakamoto, Toshitsugu"}],"nameIdentifiers":[{"nameIdentifier":"773907","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tada, Munehiro"}],"nameIdentifiers":[{"nameIdentifier":"773908","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori"}],"nameIdentifiers":[{"nameIdentifier":"773909","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"773910","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuboyama, Satoshi"}],"nameIdentifiers":[{"nameIdentifier":"773911","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shindo, Hiroyuki"}],"nameIdentifiers":[{"nameIdentifier":"773912","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"773913","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"773914","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-08-06"}],"displaytype":"detail","filename":"48d466ecfdf6e7d287ce1ea08c9b52df.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array.pdf","url":"https://repo.qst.go.jp/record/76297/files/48d466ecfdf6e7d287ce1ea08c9b52df.pdf"},"version_id":"b2a712f3-a393-4990-abd2-230e9eec1055"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-07-18"},"publish_date":"2019-07-18","publish_status":"0","recid":"76297","relation_version_is_last":true,"title":["Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:24:50.066227+00:00"}