@article{oai:repo.qst.go.jp:00076297,
 author = {Takeuchi, Kozo and Sakamoto, Toshitsugu and Tada, Munehiro and Takeyama, Akinori and Ohshima, Takeshi and Kuboyama, Satoshi and Shindo, Hiroyuki and Takeyama, Akinori and Ohshima, Takeshi},
 issue = {7},
 journal = {IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
 month = {Jul},
 note = {Single-event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal–oxide–semiconductor (CMOS) are investigated with both heavy-ion and pulsed laser irradiation. In the evaluation of an AS-based field-programmable gate array (AS-FPGA), ASs show immunity against the irradiation and there is no change of the state of ASs both in a crossbar
switch and memory in lookup tables (LUTs). ASs are not supposed to make any single-event transient (SET) noise when the ions hit. However, the CMOS layer shows SETs, and new approaches are proposed to solve the SET in CMOS, especially for AS-FPGA application.},
 pages = {1355--1360},
 title = {Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array},
 volume = {66},
 year = {2019}
}