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Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures
https://repo.qst.go.jp/records/86358
https://repo.qst.go.jp/records/8635827d65da0-01c7-4ddf-9f01-eb963faf29af
Item type | 会議発表用資料 / Presentation(1) | |||||
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公開日 | 2022-06-21 | |||||
タイトル | ||||||
タイトル | Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Shu, Motoki
× Shu, Motoki× Shinichiro, Sato× Yuta, Masuyama× Yuichi, Yamazaki× Seiichi, Saiki× Yasuto, Hijikata× Takeshi, Ohshima× Shu, Motoki× Shinichiro, Sato× Yuta, Masuyama× Yuichi, Yamazaki× Seiichi, Saiki× Takeshi, Ohshima |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Silicon vacancies (Vsi) in silicon carbide (SiC) have attracted attention because they can be used for quantum sensors (F. Fuchs et al., Nat. Com. 6: 7578 (2015)). We aim to develop Vsi magnetic sensors operating at high temperatures because of its structural stability. However, change with temperatures, especially high temperature, in optically detected magnetic resonance (ODMR) in the ground state of Vsi, which is the basic principle of magnetic sensing, is less well understood. Here, we report the change in ODMR spectra of Vsi with different temperatures. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Defects in solids for quantum technologies(DSQT) | |||||
発表年月日 | ||||||
日付 | 2022-06-16 | |||||
日付タイプ | Issued |