{"created":"2023-05-15T15:03:48.219086+00:00","id":86358,"links":{},"metadata":{"_buckets":{"deposit":"381c17ae-b3d3-4bc9-b551-c49aa9676a27"},"_deposit":{"created_by":1,"id":"86358","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"86358"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00086358","sets":["10:29"]},"author_link":["1055931","1055923","1055925","1055927","1055928","1055930","1055922","1055934","1055924","1055933","1055932","1055929","1055926"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-06-16","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Silicon vacancies (Vsi) in silicon carbide (SiC) have attracted attention because they can be used for quantum sensors (F. Fuchs et al., Nat. Com. 6: 7578　(2015)). We aim to develop Vsi magnetic sensors operating at high temperatures because of its structural stability. However, change with temperatures, especially high temperature, in optically detected magnetic resonance (ODMR) in the　ground state of Vsi, which is the basic principle of magnetic sensing, is less well understood. Here, we report the change in ODMR spectra of Vsi with different temperatures.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"Defects in solids for quantum technologies(DSQT)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shu, Motoki"}],"nameIdentifiers":[{"nameIdentifier":"1055922","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato"}],"nameIdentifiers":[{"nameIdentifier":"1055923","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuta, Masuyama"}],"nameIdentifiers":[{"nameIdentifier":"1055924","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki"}],"nameIdentifiers":[{"nameIdentifier":"1055925","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Seiichi, Saiki"}],"nameIdentifiers":[{"nameIdentifier":"1055926","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yasuto, Hijikata"}],"nameIdentifiers":[{"nameIdentifier":"1055927","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1055928","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shu, Motoki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1055929","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1055930","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuta, Masuyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1055931","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1055932","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Seiichi, Saiki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1055933","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1055934","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":" Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":" Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-06-21"},"publish_date":"2022-06-21","publish_status":"0","recid":"86358","relation_version_is_last":true,"title":[" Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T16:56:20.340814+00:00"}