@misc{oai:repo.qst.go.jp:00086358,
 author = {Shu, Motoki and Shinichiro, Sato and Yuta, Masuyama and Yuichi, Yamazaki and Seiichi, Saiki and Yasuto, Hijikata and Takeshi, Ohshima and Shu, Motoki and Shinichiro, Sato and Yuta, Masuyama and Yuichi, Yamazaki and Seiichi, Saiki and Takeshi, Ohshima},
 month = {Jun},
 note = {Silicon vacancies (Vsi) in silicon carbide (SiC) have attracted attention because they can be used for quantum sensors (F. Fuchs et al., Nat. Com. 6: 7578　(2015)). We aim to develop Vsi magnetic sensors operating at high temperatures because of its structural stability. However, change with temperatures, especially high temperature, in optically detected magnetic resonance (ODMR) in the　ground state of Vsi, which is the basic principle of magnetic sensing, is less well understood. Here, we report the change in ODMR spectra of Vsi with different temperatures., Defects in solids for quantum technologies(DSQT)},
 title = {Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures},
 year = {2022}
}