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Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity
https://repo.qst.go.jp/records/86357
https://repo.qst.go.jp/records/86357476ddf3c-1667-40b7-983d-b9de73fbfcbb
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2022-06-21 | |||||
| タイトル | ||||||
| タイトル | Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐藤, 真一郎
× 佐藤, 真一郎× Oto, Takao× Shinichiro, Sato |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Neodymium (Nd)-doped GaN (Nd:GaN) exhibits near infrared (NIR) emission that is temperature insensitive, sharp and stable. Additionally, such materials utilize well-developed GaN platform, enabling integration into more complex devices and the photon emission can be electrically controlled (J.H. Kim, P.H. Holloway, Adv. Mater. 17 (2005) 91-96.). These superior optical and opto-electronic properties are also suitable for single photon source (SPS) which is a key technology for quantum computing and quantum key distribution. However, the photon emission rate enhancement is required to optically detect isolated single Nd ions toward the realization of Nd:GaN SPS. Here we report the photon emission rate enhancement of Nd ions in GaN coupled to photonic crystal L3 cavity based on the Purcell effect. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Defects in solids for quantum technologies(DSQT) | |||||
| 発表年月日 | ||||||
| 日付 | 2022-06-17 | |||||
| 日付タイプ | Issued | |||||
