@misc{oai:repo.qst.go.jp:00086357,
 author = {佐藤, 真一郎 and Oto, Takao and Shinichiro, Sato},
 month = {Jun},
 note = {Neodymium (Nd)-doped GaN (Nd:GaN) exhibits near infrared (NIR) emission that is temperature insensitive, sharp and stable. Additionally, such materials utilize well-developed GaN platform, enabling integration into more complex devices and the photon emission can be electrically controlled (J.H. Kim, P.H. Holloway, Adv. Mater. 17 (2005) 91-96.). These superior optical and opto-electronic properties are also suitable for single photon source (SPS) which is a key technology for quantum computing and quantum key distribution. However, the photon emission rate enhancement is required to optically detect isolated single Nd ions toward the realization of Nd:GaN SPS. Here we report the photon emission rate enhancement of Nd ions in GaN coupled to photonic crystal L3 cavity based on the Purcell effect., Defects in solids for quantum technologies(DSQT)},
 title = {Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity},
 year = {2022}
}