{"created":"2023-05-15T15:03:48.153170+00:00","id":86357,"links":{},"metadata":{"_buckets":{"deposit":"14c4e59b-6f79-41b9-bea0-44d4973f1d40"},"_deposit":{"created_by":1,"id":"86357","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"86357"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00086357","sets":["10:29"]},"author_link":["1053151","1053153","1053152"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-06-17","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Neodymium (Nd)-doped GaN (Nd:GaN) exhibits near infrared (NIR) emission that is temperature insensitive, sharp and stable. Additionally, such materials utilize well-developed GaN platform, enabling integration into more complex devices and the photon emission can be electrically controlled (J.H. Kim, P.H. Holloway, Adv. Mater. 17 (2005) 91-96.). These superior optical and opto-electronic properties are also suitable for single photon source (SPS) which is a key technology for quantum computing and quantum key distribution. However, the photon emission rate enhancement is required to optically detect isolated single Nd ions toward the realization of Nd:GaN SPS. Here we report the photon emission rate enhancement of Nd ions in GaN coupled to photonic crystal L3 cavity based on the Purcell effect.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"Defects in solids for quantum technologies(DSQT)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"1053151","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oto, Takao"}],"nameIdentifiers":[{"nameIdentifier":"1053152","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1053153","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-06-21"},"publish_date":"2022-06-21","publish_status":"0","recid":"86357","relation_version_is_last":true,"title":["Purcell Enhancement of Near Infrared Photoluminescence from Nd-doped GaN Photonic Crystal L3 Cavity"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:02:39.862696+00:00"}