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Three-temperature model for laser processing of Silicon
https://repo.qst.go.jp/records/86073
https://repo.qst.go.jp/records/86073279abcbd-5183-453e-ab75-3ed520329f86
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-11-08 | |||||
| タイトル | ||||||
| タイトル | Three-temperature model for laser processing of Silicon | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Venkat, Prachi
× Venkat, Prachi× Tomohito, Otobe× Venkat, Prachi× Tomohito, Otobe |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Laser processing studies of semiconductors are crucial for the practical applications, as well as for understanding the physics of such interactions. Theoretical modeling of these interactions usually involves the use of Two-Temperature model (TTM), which is a widely implemented approach to study the evolution of electron and lattice dynamics during laser excitation. However, it has been observed that electron and hole quasi-temperatures evolve differently on the surface of Silicon, as they depend crucially on the excitation process. In this work, we would like to present a new Three-Temperature model (3TM) to study distinct electron, hole and lattice temperatures. The evolution of these three subsystems is simulated. The electro-magnetic field dynamics is formulated using the finite difference time domain method to solve Maxwell’s equations, together with temperature dependent refractive index and two-photon absorption coefficient. Damage threshold data is studied and compared with experimental data for Silicon. |
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| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 16th International Conference on Laser Ablation (COLA 2021/2022) | |||||
| 発表年月日 | ||||||
| 日付 | 2022-04-24 | |||||
| 日付タイプ | Issued | |||||
