@misc{oai:repo.qst.go.jp:00086073,
 author = {Venkat, Prachi and Tomohito, Otobe and Venkat, Prachi and Tomohito, Otobe},
 month = {Apr},
 note = {Laser processing studies of semiconductors are crucial for the practical applications, as well as for understanding the physics of such interactions. Theoretical modeling of these interactions usually involves the use of Two-Temperature model (TTM), which is a widely implemented approach to
study the evolution of electron and lattice dynamics during laser excitation. However, it has been observed that electron and hole quasi-temperatures evolve differently on the surface of Silicon, as they depend crucially on the excitation
process. In this work, we would like to present a new Three-Temperature model (3TM) to study distinct electron, hole and lattice temperatures. The evolution of these three subsystems is simulated. The electro-magnetic field dynamics is
formulated using the finite difference time domain method to solve Maxwell’s equations, together with temperature dependent refractive index and two-photon absorption coefficient. Damage threshold data is studied and compared
with experimental data for Silicon., 16th International Conference on Laser Ablation (COLA 2021/2022)},
 title = {Three-temperature model for laser processing of Silicon},
 year = {2022}
}