{"created":"2023-05-15T15:03:31.849791+00:00","id":86073,"links":{},"metadata":{"_buckets":{"deposit":"d2d0b893-202d-4c15-9d30-2079660e9bf3"},"_deposit":{"created_by":1,"id":"86073","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"86073"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00086073","sets":["10:29"]},"author_link":["1044376","1044373","1044374","1044375"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-04-24","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Laser processing studies of semiconductors are crucial for the practical applications, as well as for understanding the physics of such interactions. Theoretical modeling of these interactions usually involves the use of Two-Temperature model (TTM), which is a widely implemented approach to\nstudy the evolution of electron and lattice dynamics during laser excitation. However, it has been observed that electron and hole quasi-temperatures evolve differently on the surface of Silicon, as they depend crucially on the excitation\nprocess. In this work, we would like to present a new Three-Temperature model (3TM) to study distinct electron, hole and lattice temperatures. The evolution of these three subsystems is simulated. The electro-magnetic field dynamics is\nformulated using the finite difference time domain method to solve Maxwell’s equations, together with temperature dependent refractive index and two-photon absorption coefficient. Damage threshold data is studied and compared\nwith experimental data for Silicon.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"16th International Conference on Laser Ablation (COLA 2021/2022)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Venkat, Prachi"}],"nameIdentifiers":[{"nameIdentifier":"1044373","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe"}],"nameIdentifiers":[{"nameIdentifier":"1044374","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Venkat, Prachi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1044375","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1044376","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Three-temperature model for laser processing of Silicon","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Three-temperature model for laser processing of Silicon"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-11-08"},"publish_date":"2021-11-08","publish_status":"0","recid":"86073","relation_version_is_last":true,"title":["Three-temperature model for laser processing of Silicon"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:17:54.142662+00:00"}