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M center in 4H-SiC is a carbon self-interstitial
https://repo.qst.go.jp/records/82944
https://repo.qst.go.jp/records/82944278ecae9-fdbc-4689-b1f7-3f21b3e5efb3
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-06-08 | |||||
| タイトル | ||||||
| タイトル | M center in 4H-SiC is a carbon self-interstitial | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Coutinho, J.
× Coutinho, J.× D. Gouveia, J.× Takahiro, Makino× Takeshi, Ohshima× Pastuovic, Z.× Bakrac, L.× Brodar, T.× Capan , I.× Takahiro, Makino× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial. | |||||
| 書誌情報 |
Physical Review B 巻 103, p. L180102, 発行日 2021-05 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2469-9950 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1103/PhysRevB.103.L180102 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://journals.aps.org/prb/abstract/10.1103/PhysRevB.103.L180102 | |||||
