{"created":"2023-05-15T15:01:08.432801+00:00","id":82944,"links":{},"metadata":{"_buckets":{"deposit":"673ba16f-a4e2-4e37-a02b-8d454851de1a"},"_deposit":{"created_by":1,"id":"82944","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"82944"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00082944","sets":["1"]},"author_link":["1004165","1004162","1004168","1004164","1004171","1004167","1004166","1004170","1004163","1004169"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-05","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"L180102","bibliographicVolumeNumber":"103","bibliographic_titles":[{"bibliographic_title":"Physical Review B"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial.","subitem_description_type":"Abstract"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevB.103.L180102","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.103.L180102","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2469-9950","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Coutinho, J."}],"nameIdentifiers":[{"nameIdentifier":"1004162","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"D. Gouveia, J."}],"nameIdentifiers":[{"nameIdentifier":"1004163","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino"}],"nameIdentifiers":[{"nameIdentifier":"1004164","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1004165","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pastuovic, Z."}],"nameIdentifiers":[{"nameIdentifier":"1004166","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Bakrac, L."}],"nameIdentifiers":[{"nameIdentifier":"1004167","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Brodar, T."}],"nameIdentifiers":[{"nameIdentifier":"1004168","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Capan , I."}],"nameIdentifiers":[{"nameIdentifier":"1004169","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1004170","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1004171","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"M center in 4H-SiC is a carbon self-interstitial","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"M center in 4H-SiC is a carbon self-interstitial"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-06-08"},"publish_date":"2021-06-08","publish_status":"0","recid":"82944","relation_version_is_last":true,"title":["M center in 4H-SiC is a carbon self-interstitial"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:28:08.750336+00:00"}