@article{oai:repo.qst.go.jp:00082944,
 author = {Coutinho, J. and D. Gouveia, J. and Takahiro, Makino and Takeshi, Ohshima and Pastuovic, Z. and Bakrac, L. and Brodar, T. and Capan , I. and Takahiro, Makino and Takeshi, Ohshima},
 journal = {Physical Review B},
 month = {May},
 note = {The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels match those of the carbon self-interstitial.},
 title = {M center in 4H-SiC is a carbon self-interstitial},
 volume = {103},
 year = {2021}
}