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A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank
https://repo.qst.go.jp/records/82833
https://repo.qst.go.jp/records/828332404b2c3-349b-43e5-a0fe-23576f86e2b0
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-05-17 | |||||
| タイトル | ||||||
| タイトル | A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Shike, Hiroya
× Shike, Hiroya× Kuroda, Rihito× Kobayashi, Ryota× Murata, Maasa× Fujihara, Yasuyuki× Suzuki, Manabu× Harada, Shoma× Shibaguchi, Taku× Kuriyama, Naoya× Hatsui, Takaki× Jun, Miyawaki× Harada, Tetsuo× Yamasaki, Yuichi× Watanabe, Takeo× Harada, Yoshihisa× Sugawa, Shigetoshi× Jun, Miyawaki |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | This article presents a prototype 22.4 μm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-μm thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bankwith high-densitySi trench capacitorswere introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me− full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers. |
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| 書誌情報 |
IEEE TRANSACTIONS ON ELECTRON DEVICES 巻 68, 号 4, p. 2056-2063, 発行日 2021-05 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0018-9383 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1109/TED.2021.3062576 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://ieeexplore.ieee.org/document/9378940 | |||||
