@article{oai:repo.qst.go.jp:00082833,
 author = {Shike, Hiroya and Kuroda, Rihito and Kobayashi, Ryota and Murata, Maasa and Fujihara, Yasuyuki and Suzuki, Manabu and Harada, Shoma and Shibaguchi, Taku and Kuriyama, Naoya and Hatsui, Takaki and Jun, Miyawaki and Harada, Tetsuo and Yamasaki, Yuichi and Watanabe, Takeo and Harada, Yoshihisa and Sugawa, Shigetoshi and Jun, Miyawaki},
 issue = {4},
 journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
 month = {May},
 note = {This article presents a prototype 22.4 μm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-μm thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bankwith high-densitySi trench capacitorswere introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me− full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward
toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.},
 pages = {2056--2063},
 title = {A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank},
 volume = {68},
 year = {2021}
}