{"created":"2023-05-15T15:01:03.629879+00:00","id":82833,"links":{},"metadata":{"_buckets":{"deposit":"52e04bd6-527f-4059-8e69-d2b046455eed"},"_deposit":{"created_by":1,"id":"82833","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"82833"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00082833","sets":["1"]},"author_link":["996771","996773","996774","996777","996765","996762","996768","996766","996761","996772","996767","996770","996769","996775","996763","996776","996764"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"2063","bibliographicPageStart":"2056","bibliographicVolumeNumber":"68","bibliographic_titles":[{"bibliographic_title":"IEEE TRANSACTIONS ON ELECTRON DEVICES"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"This article presents a prototype 22.4 μm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-μm thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bankwith high-densitySi trench capacitorswere introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me− full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward\ntoward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/TED.2021.3062576","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://ieeexplore.ieee.org/document/9378940","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0018-9383","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shike, Hiroya"}],"nameIdentifiers":[{"nameIdentifier":"996761","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuroda, Rihito"}],"nameIdentifiers":[{"nameIdentifier":"996762","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kobayashi, Ryota"}],"nameIdentifiers":[{"nameIdentifier":"996763","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murata, Maasa"}],"nameIdentifiers":[{"nameIdentifier":"996764","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujihara, Yasuyuki"}],"nameIdentifiers":[{"nameIdentifier":"996765","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Suzuki, Manabu"}],"nameIdentifiers":[{"nameIdentifier":"996766","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Harada, Shoma"}],"nameIdentifiers":[{"nameIdentifier":"996767","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shibaguchi, Taku"}],"nameIdentifiers":[{"nameIdentifier":"996768","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuriyama, Naoya"}],"nameIdentifiers":[{"nameIdentifier":"996769","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hatsui, Takaki"}],"nameIdentifiers":[{"nameIdentifier":"996770","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jun, Miyawaki"}],"nameIdentifiers":[{"nameIdentifier":"996771","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Harada, Tetsuo"}],"nameIdentifiers":[{"nameIdentifier":"996772","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamasaki, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"996773","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Watanabe, Takeo"}],"nameIdentifiers":[{"nameIdentifier":"996774","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Harada, Yoshihisa"}],"nameIdentifiers":[{"nameIdentifier":"996775","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugawa, Shigetoshi"}],"nameIdentifiers":[{"nameIdentifier":"996776","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jun, Miyawaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"996777","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-05-17"},"publish_date":"2021-05-17","publish_status":"0","recid":"82833","relation_version_is_last":true,"title":["A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:55:50.003454+00:00"}