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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
https://repo.qst.go.jp/records/82657
https://repo.qst.go.jp/records/826575d953c31-b604-4e4d-8eae-f7880f745491
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-04-07 | |||||
| タイトル | ||||||
| タイトル | Narrow inhomogeneous distribution of spin-active emitters in silicon carbide | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Nagy, Roland
× Nagy, Roland× Bhaktavatsala Rao Dasari, Durga× Babin, Charles× Liu, Di× Vorobyov, Vadim× Niethammer, Matthias× Widmann, Matthias× Linkewitz, Tobias× Gediz, Izel× Stohr, Rainer× B. Weber, Heiko× Takeshi, Ohshima× Ghezellou, Misagh× Tien Son, Nguyen× Jawad, Ul-Hassan× Kaiser, Florian× Wrachtrup, Jorg× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication, and sensing. Realizing scalability and increasing application complexity require entangling multiple individual systems, e.g., via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centers in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of 0.43 micro-meter3. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction-limited excitation spots, for which we introduce simplified schemes for the generation of computationally relevant Greenberger–Horne–Zeilinger and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications. |
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| 書誌情報 |
Applied Physics Letters 巻 118, p. 144003, 発行日 2021-04 |
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| 出版者 | ||||||
| 出版者 | AIP publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/5.0046563 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://aip.scitation.org/doi/10.1063/5.0046563?af=R&feed=most-recent | |||||
