@article{oai:repo.qst.go.jp:00082657,
 author = {Nagy, Roland and Bhaktavatsala Rao Dasari, Durga and Babin, Charles and Liu, Di and Vorobyov, Vadim and Niethammer, Matthias and Widmann, Matthias and Linkewitz, Tobias and Gediz, Izel and Stohr, Rainer and B. Weber, Heiko and Takeshi, Ohshima and Ghezellou, Misagh and Tien Son, Nguyen and Jawad, Ul-Hassan and Kaiser, Florian and Wrachtrup, Jorg and Takeshi, Ohshima},
 journal = {Applied Physics Letters},
 month = {Apr},
 note = {Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication, and sensing. Realizing scalability and increasing application complexity require entangling multiple individual systems, e.g., via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centers in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of 0.43 micro-meter3. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited
linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction-limited excitation spots, for which we introduce simplified schemes for the generation of computationally relevant Greenberger–Horne–Zeilinger and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.},
 title = {Narrow inhomogeneous distribution of spin-active emitters in silicon carbide},
 volume = {118},
 year = {2021}
}