{"created":"2023-05-15T15:00:56.092161+00:00","id":82657,"links":{},"metadata":{"_buckets":{"deposit":"3992ae4f-d220-470c-9ea8-4c6d423b4d7e"},"_deposit":{"created_by":1,"id":"82657","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"82657"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00082657","sets":["1"]},"author_link":["1004074","1004061","1004064","1004069","1004063","1004066","1004059","1004060","1004057","1004067","1004070","1004062","1004068","1004071","1004073","1004072","1004058","1004065"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-04","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"144003","bibliographicVolumeNumber":"118","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication, and sensing. Realizing scalability and increasing application complexity require entangling multiple individual systems, e.g., via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centers in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of 0.43 micro-meter3. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited\nlinewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction-limited excitation spots, for which we introduce simplified schemes for the generation of computationally relevant Greenberger–Horne–Zeilinger and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/5.0046563","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://aip.scitation.org/doi/10.1063/5.0046563?af=R&feed=most-recent","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nagy, Roland"}],"nameIdentifiers":[{"nameIdentifier":"1004057","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Bhaktavatsala Rao Dasari, Durga"}],"nameIdentifiers":[{"nameIdentifier":"1004058","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Babin, Charles"}],"nameIdentifiers":[{"nameIdentifier":"1004059","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Liu, Di"}],"nameIdentifiers":[{"nameIdentifier":"1004060","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Vorobyov, Vadim"}],"nameIdentifiers":[{"nameIdentifier":"1004061","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Niethammer, Matthias"}],"nameIdentifiers":[{"nameIdentifier":"1004062","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Widmann, Matthias"}],"nameIdentifiers":[{"nameIdentifier":"1004063","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Linkewitz, Tobias"}],"nameIdentifiers":[{"nameIdentifier":"1004064","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gediz, Izel"}],"nameIdentifiers":[{"nameIdentifier":"1004065","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Stohr, Rainer"}],"nameIdentifiers":[{"nameIdentifier":"1004066","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"B. Weber, Heiko"}],"nameIdentifiers":[{"nameIdentifier":"1004067","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1004068","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ghezellou, Misagh"}],"nameIdentifiers":[{"nameIdentifier":"1004069","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tien Son, Nguyen"}],"nameIdentifiers":[{"nameIdentifier":"1004070","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jawad, Ul-Hassan"}],"nameIdentifiers":[{"nameIdentifier":"1004071","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kaiser, Florian"}],"nameIdentifiers":[{"nameIdentifier":"1004072","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wrachtrup, Jorg"}],"nameIdentifiers":[{"nameIdentifier":"1004073","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1004074","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Narrow inhomogeneous distribution of spin-active emitters in silicon carbide","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Narrow inhomogeneous distribution of spin-active emitters in silicon carbide"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-04-07"},"publish_date":"2021-04-07","publish_status":"0","recid":"82657","relation_version_is_last":true,"title":["Narrow inhomogeneous distribution of spin-active emitters in silicon carbide"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:28:32.834641+00:00"}