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Behavior of Leakage Current in SiC MOS Capacitors Introduced by Heavy Ions
https://repo.qst.go.jp/records/82421
https://repo.qst.go.jp/records/82421070c186e-5899-4568-92a6-5c3269b0e9b6
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2021-03-22 | |||||
| タイトル | ||||||
| タイトル | Behavior of Leakage Current in SiC MOS Capacitors Introduced by Heavy Ions | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Takahashi, Misa
× Takahashi, Misa× Nakada, Yuki× Mizuta, Eiichi× Shindo, Hiroyuki× Senzaki, Junji× Akinori, Takeyama× Takahiro, Makino× Takeshi, Ohshima× Yoshiyuki, Iwata× Kuboyama, Satoshi× Akinori, Takeyama× Takahiro, Makino× Takeshi, Ohshima× Yoshiyuki, Iwata |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Gradual increase in leakage current introduced by heavy ions irradiation was observed for silicon carbide metal-oxide-semiconductor (SiC MOS) capacitors under the negative bias voltage condition. In contrast, abrupt increase was observed for positive biased condition as previously observed for Si MOS devices. It was identified that the degradation sites introduced under negative bias have a rectifying I–V characteristic, which were too small to cause a clear shift of the C–V curve. It was inferred that the hetero junction formed in SiC MOS capacitors was the key structure for suppressing catastrophic failures mode observed in Si MOS structures. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Nuclear & Space Radiation Effects Conference 2020( NSREC 2020) | |||||
| 発表年月日 | ||||||
| 日付 | 2020-12-08 | |||||
| 日付タイプ | Issued | |||||
