@misc{oai:repo.qst.go.jp:00082421,
 author = {Takahashi, Misa and Nakada, Yuki and Mizuta, Eiichi and Shindo, Hiroyuki and Senzaki, Junji and Akinori, Takeyama and Takahiro, Makino and Takeshi, Ohshima and Yoshiyuki, Iwata and Kuboyama, Satoshi and Akinori, Takeyama and Takahiro, Makino and Takeshi, Ohshima and Yoshiyuki, Iwata},
 month = {Dec},
 note = {Gradual increase in leakage current introduced by heavy ions irradiation was observed for silicon carbide metal-oxide-semiconductor (SiC MOS) capacitors under the negative bias voltage condition. In contrast, abrupt increase was observed for positive biased condition as previously observed for Si MOS devices. It was identified that the degradation sites introduced under negative bias have a rectifying I–V characteristic, which were too small to cause a clear shift of the C–V curve. It was inferred that the hetero junction formed in SiC MOS capacitors was the key structure for suppressing catastrophic failures mode observed in Si MOS structures., Nuclear & Space Radiation Effects Conference 2020( NSREC 2020)},
 title = {Behavior of Leakage Current in SiC MOS Capacitors Introduced by Heavy Ions},
 year = {2020}
}