{"created":"2023-05-15T15:00:45.295817+00:00","id":82421,"links":{},"metadata":{"_buckets":{"deposit":"3babee41-3784-4f6e-bc78-fd5f9388a5b2"},"_deposit":{"created_by":1,"id":"82421","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"82421"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00082421","sets":["10:28"]},"author_link":["939834","939840","939842","939833","939837","939836","939845","939846","939843","939844","939841","939839","939835","939838"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2020-12-08","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  Gradual increase in leakage current introduced by heavy ions irradiation was observed for silicon carbide metal-oxide-semiconductor (SiC MOS) capacitors under the negative bias voltage condition. In contrast, abrupt increase was observed for positive biased condition as previously observed for Si MOS devices. It was identified that the degradation sites introduced under negative bias have a rectifying I–V characteristic, which were too small to cause a clear shift of the C–V curve. It was inferred that the hetero junction formed in SiC MOS capacitors was the key structure for suppressing catastrophic failures mode observed in Si MOS structures.  　","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"Nuclear & Space Radiation Effects Conference 2020( NSREC 2020)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takahashi, Misa"}],"nameIdentifiers":[{"nameIdentifier":"939833","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakada, Yuki"}],"nameIdentifiers":[{"nameIdentifier":"939834","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mizuta, Eiichi"}],"nameIdentifiers":[{"nameIdentifier":"939835","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shindo, Hiroyuki"}],"nameIdentifiers":[{"nameIdentifier":"939836","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Senzaki, Junji"}],"nameIdentifiers":[{"nameIdentifier":"939837","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama"}],"nameIdentifiers":[{"nameIdentifier":"939838","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino"}],"nameIdentifiers":[{"nameIdentifier":"939839","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"939840","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yoshiyuki, Iwata"}],"nameIdentifiers":[{"nameIdentifier":"939841","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuboyama, Satoshi"}],"nameIdentifiers":[{"nameIdentifier":"939842","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"939843","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"939844","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"939845","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yoshiyuki, Iwata","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"939846","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Behavior of Leakage Current in SiC MOS Capacitors Introduced by Heavy Ions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Behavior of Leakage Current in SiC MOS Capacitors Introduced by Heavy Ions"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-03-22"},"publish_date":"2021-03-22","publish_status":"0","recid":"82421","relation_version_is_last":true,"title":["Behavior of Leakage Current in SiC MOS Capacitors Introduced by Heavy Ions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:24:30.955713+00:00"}