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STUDY ON IRRADIATION EFFECTS BY FEMTOSECOND-PULSED EXTREME ULTRAVIOLET IN MAIN-CHAIN SCISSION RESIST

https://repo.qst.go.jp/records/81103
https://repo.qst.go.jp/records/81103
a1ebe61b-d051-4d0b-b774-396cd888cf2e
Item type 会議発表用資料 / Presentation(1)
公開日 2020-10-21
タイトル
タイトル STUDY ON IRRADIATION EFFECTS BY FEMTOSECOND-PULSED EXTREME ULTRAVIOLET IN MAIN-CHAIN SCISSION RESIST
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_c94f
資源タイプ conference object
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Hosaka, Yuji

× Hosaka, Yuji

WEKO 923799

Hosaka, Yuji

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Yamamoto, Hiroki

× Yamamoto, Hiroki

WEKO 923800

Yamamoto, Hiroki

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Ishino, Masahiko

× Ishino, Masahiko

WEKO 923801

Ishino, Masahiko

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Dinh, Thanhhung

× Dinh, Thanhhung

WEKO 923802

Dinh, Thanhhung

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Nishikino, Masaharu

× Nishikino, Masaharu

WEKO 923803

Nishikino, Masaharu

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Maekawa, Yasunari

× Maekawa, Yasunari

WEKO 923804

Maekawa, Yasunari

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Yuji, Hosaka

× Yuji, Hosaka

WEKO 923805

en Yuji, Hosaka

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Hiroki, Yamamoto

× Hiroki, Yamamoto

WEKO 923806

en Hiroki, Yamamoto

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Masahiko, Ishino

× Masahiko, Ishino

WEKO 923807

en Masahiko, Ishino

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Dinh, Thanhhung

× Dinh, Thanhhung

WEKO 923808

en Dinh, Thanhhung

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Masaharu, Nishikino

× Masaharu, Nishikino

WEKO 923809

en Masaharu, Nishikino

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Yasunari, Maekawa

× Yasunari, Maekawa

WEKO 923810

en Yasunari, Maekawa

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抄録
内容記述タイプ Abstract
内容記述 Femtosecond-pulsed extreme ultraviolet (EUV) of free-electron laser (FEL) is the most potential candidates for a next-generation EUV lithography light source. However, the physical events and chemical reactions in resist materials, induced by EUV with a short pulse width and high power intensity, have not yet been elucidated. In our previous study, the morphological and chemical changes in poly(methyl methacrylate) (PMMA) induced by picosecond-pulsed EUV were investigated using an X-ray laser. The sensitivity of PMMA upon exposure to a 7 ps EUV pulse was much enhanced in comparison with that using conventional EUV sources, which have a typical pulse width of the order of nanoseconds. In this study, the sensitivity of PMMA upon exposure to femtosecond-pulsed EUV was investigated by using FEL to obtain the resist design for next-generation EUV lithography.
会議概要(会議名, 開催地, 会期, 主催者等)
内容記述タイプ Other
内容記述 33rd International Microprocesses and Nanotechnology Conference (MNC 2020)
発表年月日
日付 2020-11-09
日付タイプ Issued
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