@misc{oai:repo.qst.go.jp:00081103,
 author = {Hosaka, Yuji and Yamamoto, Hiroki and Ishino, Masahiko and Dinh, Thanhhung and Nishikino, Masaharu and Maekawa, Yasunari and Yuji, Hosaka and Hiroki, Yamamoto and Masahiko, Ishino and Dinh, Thanhhung and Masaharu, Nishikino and Yasunari, Maekawa},
 month = {Nov},
 note = {Femtosecond-pulsed extreme ultraviolet (EUV) of free-electron laser (FEL) is the most potential candidates for a next-generation EUV lithography light source. However, the physical events and chemical reactions in resist materials, induced by EUV with a short pulse width and high power intensity, have not yet been elucidated. In our previous study, the morphological and chemical changes in poly(methyl methacrylate) (PMMA) induced by picosecond-pulsed EUV were investigated using an X-ray laser. The sensitivity of PMMA upon exposure to a 7 ps EUV pulse was much enhanced in comparison with that using conventional EUV sources, which have a typical pulse width of the order of nanoseconds. In this study, the sensitivity of PMMA upon exposure to femtosecond-pulsed EUV was investigated by using FEL to obtain the resist design for next-generation EUV lithography., 33rd International Microprocesses and Nanotechnology Conference (MNC 2020)},
 title = {STUDY ON IRRADIATION EFFECTS BY FEMTOSECOND-PULSED EXTREME ULTRAVIOLET IN MAIN-CHAIN SCISSION RESIST},
 year = {2020}
}