WEKO3
-
RootNode
アイテム
Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
https://repo.qst.go.jp/records/80477
https://repo.qst.go.jp/records/804777873158f-cfeb-4387-b83d-d7c2ea8c2f1a
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-09-11 | |||||
| タイトル | ||||||
| タイトル | Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Sato, Shinichiro
× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Hijikata, Yasuto× C. Gibson, Brant× D. Greentree, Andrew× Ohshima, Takeshi× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Ohshima, Takeshi |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | This paper reports optical properties of negatively charged NcVsi- centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavelength is 1100-1500 nm at room temperature. High-purity semi-insulating (HPSI) 4H-SiCs are implanted with high energy N ion beams and subsequently thermally annealed to form NcVsi- centers. We investigated a wide range of N ion implantation dose using a micro ion beam implantation technique and observed the photoluminescence intensity from the SiC-NV centers. We show that under conditions of heavy implantation, the excitation laser power excites residual defects and their fluorescences interferes with the emission from the NcVsi- centers. These results allow us to clarify the requirements to optically detect isolated single NcVsi- centers at lightly implanted conditions. |
|||||
| 書誌情報 |
Materials Science Forum 巻 1004, p. 355-360, 発行日 2020-07 |
|||||
| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.1004.355 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.scientific.net/MSF.1004.355 | |||||
Share
Cite as
Sato, Shinichiro, Narahara, Takuma, Onoda, Shinobu, Yamazaki, Yuichi, Hijikata, Yasuto, C. Gibson, Brant, D. Greentree, Andrew, Ohshima, Takeshi, Sato, Shinichiro, Narahara, Takuma, Onoda, Shinobu, Yamazaki, Yuichi, Ohshima, Takeshi, n.d., Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles: Trans Tech Publications, 355–360 p.
