{"created":"2023-05-15T14:59:18.992928+00:00","id":80477,"links":{},"metadata":{"_buckets":{"deposit":"0fa286a0-abfa-4021-bc90-4a3180801cc0"},"_deposit":{"created_by":1,"id":"80477","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"80477"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00080477","sets":["1"]},"author_link":["907341","907343","907338","907335","907345","907344","907337","907342","907334","907336","907346","907340","907339"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"360","bibliographicPageStart":"355","bibliographicVolumeNumber":"1004","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"This paper reports optical properties of negatively charged NcVsi- centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavelength is 1100-1500 nm at room temperature. High-purity semi-insulating (HPSI) 4H-SiCs are implanted with high energy N ion beams and subsequently thermally annealed to form NcVsi-  centers. We investigated a wide range of N ion implantation dose using a micro ion beam implantation technique and observed the photoluminescence intensity from the SiC-NV centers. We show that under conditions of heavy implantation, the excitation laser power excites residual defects and their fluorescences interferes with the emission from the NcVsi-  centers. These results allow us to clarify\nthe requirements to optically detect isolated single NcVsi- centers at lightly implanted conditions.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.1004.355","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.scientific.net/MSF.1004.355","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sato, Shinichiro"}],"nameIdentifiers":[{"nameIdentifier":"907334","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Narahara, Takuma"}],"nameIdentifiers":[{"nameIdentifier":"907335","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu"}],"nameIdentifiers":[{"nameIdentifier":"907336","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"907337","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hijikata, Yasuto"}],"nameIdentifiers":[{"nameIdentifier":"907338","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"C. Gibson, Brant"}],"nameIdentifiers":[{"nameIdentifier":"907339","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"D. Greentree, Andrew"}],"nameIdentifiers":[{"nameIdentifier":"907340","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"907341","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"907342","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Narahara, Takuma","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"907343","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Onoda, Shinobu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"907344","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"907345","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"907346","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-09-11"},"publish_date":"2020-09-11","publish_status":"0","recid":"80477","relation_version_is_last":true,"title":["Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T21:08:33.306450+00:00"}