@article{oai:repo.qst.go.jp:00080477,
 author = {Sato, Shinichiro and Narahara, Takuma and Onoda, Shinobu and Yamazaki, Yuichi and Hijikata, Yasuto and C. Gibson, Brant and D. Greentree, Andrew and Ohshima, Takeshi and Sato, Shinichiro and Narahara, Takuma and Onoda, Shinobu and Yamazaki, Yuichi and Ohshima, Takeshi},
 journal = {Materials Science Forum},
 month = {Jul},
 note = {This paper reports optical properties of negatively charged NcVsi- centers in silicon carbide (a nitrogen substituting for a carbon atom adjacent to a silicon vacancy) whose emission wavelength is 1100-1500 nm at room temperature. High-purity semi-insulating (HPSI) 4H-SiCs are implanted with high energy N ion beams and subsequently thermally annealed to form NcVsi-  centers. We investigated a wide range of N ion implantation dose using a micro ion beam implantation technique and observed the photoluminescence intensity from the SiC-NV centers. We show that under conditions of heavy implantation, the excitation laser power excites residual defects and their fluorescences interferes with the emission from the NcVsi-  centers. These results allow us to clarify
the requirements to optically detect isolated single NcVsi- centers at lightly implanted conditions.},
 pages = {355--360},
 title = {Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles},
 volume = {1004},
 year = {2020}
}