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Characteristic Charge Collection Mechanism Observed in FinFET SRAM cells
https://repo.qst.go.jp/records/80095
https://repo.qst.go.jp/records/800955860f08a-dcba-46b3-9e15-5dd794449b94
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-06-17 | |||||
| タイトル | ||||||
| タイトル | Characteristic Charge Collection Mechanism Observed in FinFET SRAM cells | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Takeuchi, Kozo
× Takeuchi, Kozo× Kato, Takashi× Sakamoto, Keita× Yukumatsu, Kazuki× Watanabe, Kyota× Tsuchiya, Yuta× Matsuyama, Hideya× Takeyama, Akinori× Ohshima, Takeshi× Kuboyama, Satoshi× Shindo, Hiroyuki× Takeyama, Akinori× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The single event effects (SEEs) characteristics on 14/16-nm bulk Fin Field-Effect Transistors (FinFETs) were investigated in terms of single bit upsets (SBUs) and multiple cell upsets (MCUs). The sensitive area estimation based on the cross-section are also discussed. | |||||
| 書誌情報 |
Radiation and its Effects on Components and Systems 2020 (RADECS 2020) proceeding 発行日 2020-06 |
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