@inproceedings{oai:repo.qst.go.jp:00080095,
 author = {Takeuchi, Kozo and Kato, Takashi and Sakamoto, Keita and Yukumatsu, Kazuki and Watanabe, Kyota and Tsuchiya, Yuta and Matsuyama, Hideya and Takeyama, Akinori and Ohshima, Takeshi and Kuboyama, Satoshi and Shindo, Hiroyuki and Takeyama, Akinori and Ohshima, Takeshi},
 book = {Radiation and its Effects on Components and Systems 2020 (RADECS 2020) proceeding},
 month = {Jun},
 note = {The single event effects (SEEs) characteristics on 14/16-nm bulk Fin Field-Effect Transistors (FinFETs) were investigated in terms of single bit upsets (SBUs) and multiple cell upsets (MCUs). The sensitive area estimation based on the cross-section are also discussed.},
 title = {Characteristic Charge Collection Mechanism Observed in FinFET SRAM cells},
 year = {2020}
}