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Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC
https://repo.qst.go.jp/records/80044
https://repo.qst.go.jp/records/80044dc008971-4eb2-4ff1-88b6-0f0e5326634a
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-06-09 | |||||
| タイトル | ||||||
| タイトル | Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Udvarhelyi, Peter
× Udvarhelyi, Peter× Thiering, Gergo× Morioka, Naoya× Babin, Charles× Kaiser, Florian× Lukin, Daniil× Ohshima, Takeshi× Jawad, Ul-Hassan× Tien Son, Nguyen× Vuckovic, Jelena× Wrachtrup, Jorg× Gali, Adam× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Silicon-vacancy in silicon carbide (SiC) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H-SiC. We apply density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects. |
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| 書誌情報 |
Physical Review Applied 巻 13, p. 054017, 発行日 2020-05 |
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| 出版者 | ||||||
| 出版者 | American Physical Society | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2331-7019 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1103/PhysRevApplied.13.054017 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.13.054017 | |||||
