{"created":"2023-05-15T14:58:59.881963+00:00","id":80044,"links":{},"metadata":{"_buckets":{"deposit":"59e8bf10-1fba-4225-a8a2-65c3724b2c95"},"_deposit":{"created_by":1,"id":"80044","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"80044"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00080044","sets":["1"]},"author_link":["871388","871383","871392","871391","871387","871393","871394","871384","871395","871390","871386","871389","871385"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-05","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"054017","bibliographicVolumeNumber":"13","bibliographic_titles":[{"bibliographic_title":"Physical Review Applied"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Silicon-vacancy in silicon carbide (SiC) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H-SiC. We apply\ndensity-functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive\nto these effects.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevApplied.13.054017","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.13.054017","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2331-7019","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Udvarhelyi, Peter"}],"nameIdentifiers":[{"nameIdentifier":"871383","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Thiering, Gergo"}],"nameIdentifiers":[{"nameIdentifier":"871384","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Morioka, Naoya"}],"nameIdentifiers":[{"nameIdentifier":"871385","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Babin, Charles"}],"nameIdentifiers":[{"nameIdentifier":"871386","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kaiser, Florian"}],"nameIdentifiers":[{"nameIdentifier":"871387","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Lukin, Daniil"}],"nameIdentifiers":[{"nameIdentifier":"871388","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"871389","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jawad, Ul-Hassan"}],"nameIdentifiers":[{"nameIdentifier":"871390","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tien Son, Nguyen"}],"nameIdentifiers":[{"nameIdentifier":"871391","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Vuckovic, Jelena"}],"nameIdentifiers":[{"nameIdentifier":"871392","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wrachtrup, Jorg"}],"nameIdentifiers":[{"nameIdentifier":"871393","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gali, Adam"}],"nameIdentifiers":[{"nameIdentifier":"871394","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"871395","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-06-09"},"publish_date":"2020-06-09","publish_status":"0","recid":"80044","relation_version_is_last":true,"title":["Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T21:51:54.883212+00:00"}