@article{oai:repo.qst.go.jp:00080044,
 author = {Udvarhelyi, Peter and Thiering, Gergo and Morioka, Naoya and Babin, Charles and Kaiser, Florian and Lukin, Daniil and Ohshima, Takeshi and Jawad, Ul-Hassan and Tien Son, Nguyen and Vuckovic, Jelena and Wrachtrup, Jorg and Gali, Adam and Ohshima, Takeshi},
 journal = {Physical Review Applied},
 month = {May},
 note = {Silicon-vacancy in silicon carbide (SiC) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H-SiC. We apply
density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive
to these effects.},
 title = {Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC},
 volume = {13},
 year = {2020}
}