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Macroscopic electron-hole distribution in silicon and cubic silicon carbide by the intense laser pulse
https://repo.qst.go.jp/records/77632
https://repo.qst.go.jp/records/77632a289fd7f-a8bf-4f23-bb54-9960adc28119
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-08-14 | |||||
| タイトル | ||||||
| タイトル | Macroscopic electron-hole distribution in silicon and cubic silicon carbide by the intense laser pulse | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Otobe, Tomohito
× Otobe, Tomohito× Tomohito, Otobe |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Electron excitations at silicon and 3C-SiC surfaces caused by an intense femtosecond laser pulse can be calculated by solving the time-dependent density functional theory and the Maxwell's equation simultaneously. The energy absorption, carrier density, and electron-hole quasi-temperatures decrease exponentially in 100 nm from the surface. The electron and hole quasi-temperatures have finite values even at large distances from the surface because of a specific photo-absorption channel. Although the quasi-temperature in the silicone shows smooth exponential decrease, 3C-SiC shows stepwise decrease because of the change of concerning bands. The quasi-temperature depends not only on the excitation process, i.e., tunnel and multi-photon absorption, but also on the band structure significantly. |
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| 書誌情報 |
Journal of Applied Physics 巻 126, 号 20, p. 203101-1-203101-7, 発行日 2019-11 |
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| 出版者 | ||||||
| 出版者 | AIP publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5124424 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://aip.scitation.org/doi/10.1063/1.5124424 | |||||
