{"created":"2023-05-15T14:57:12.467318+00:00","id":77632,"links":{},"metadata":{"_buckets":{"deposit":"fdd3df4d-35ec-4ebf-b7fd-3b6a7c455453"},"_deposit":{"created_by":1,"id":"77632","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77632"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077632","sets":["1"]},"author_link":["1004688","1004687"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"20","bibliographicPageEnd":"203101-7","bibliographicPageStart":"203101-1","bibliographicVolumeNumber":"126","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Electron excitations at silicon and 3C-SiC surfaces caused by an intense femtosecond laser pulse can be calculated by solving the time-dependent density functional theory and the Maxwell's equation simultaneously.\nThe energy absorption, carrier density, and electron-hole quasi-temperatures decrease exponentially in 100 nm from the surface.\nThe electron and hole quasi-temperatures have finite values even at large distances from the surface because of a specific photo-absorption channel.\nAlthough the quasi-temperature in the silicone shows smooth exponential decrease, 3C-SiC shows stepwise decrease because of the change of concerning bands. \nThe quasi-temperature depends not only on the excitation process, i.e., tunnel and multi-photon absorption, but also on the band structure significantly. ","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.5124424","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://aip.scitation.org/doi/10.1063/1.5124424","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Otobe, Tomohito"}],"nameIdentifiers":[{"nameIdentifier":"1004687","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tomohito, Otobe","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1004688","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Macroscopic electron-hole distribution in silicon and cubic silicon carbide by the intense laser pulse","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Macroscopic electron-hole distribution in silicon and cubic silicon carbide by the intense laser pulse"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-08-14"},"publish_date":"2019-08-14","publish_status":"0","recid":"77632","relation_version_is_last":true,"title":["Macroscopic electron-hole distribution in silicon and cubic silicon carbide by the intense laser pulse"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:26:21.525254+00:00"}