@article{oai:repo.qst.go.jp:00077632,
 author = {Otobe, Tomohito and Tomohito, Otobe},
 issue = {20},
 journal = {Journal of Applied Physics},
 month = {Nov},
 note = {Electron excitations at silicon and 3C-SiC surfaces caused by an intense femtosecond laser pulse can be calculated by solving the time-dependent density functional theory and the Maxwell's equation simultaneously.
The energy absorption, carrier density, and electron-hole quasi-temperatures decrease exponentially in 100 nm from the surface.
The electron and hole quasi-temperatures have finite values even at large distances from the surface because of a specific photo-absorption channel.
Although the quasi-temperature in the silicone shows smooth exponential decrease, 3C-SiC shows stepwise decrease because of the change of concerning bands. 
The quasi-temperature depends not only on the excitation process, i.e., tunnel and multi-photon absorption, but also on the band structure significantly.},
 pages = {203101-1--203101-7},
 title = {Macroscopic electron-hole distribution in silicon and cubic silicon carbide by the intense laser pulse},
 volume = {126},
 year = {2019}
}