WEKO3
アイテム
{"_buckets": {"deposit": "6e17a62d-b403-4937-b5ac-4fe686af70d9"}, "_deposit": {"created_by": 1, "id": "77613", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "77613"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00077613", "sets": ["28"]}, "author_link": ["822792", "822783", "822790", "822791", "822786", "822784", "822789", "822788", "822785", "822787"], "item_10005_date_7": {"attribute_name": "発表年月日", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2019-10-01", "subitem_date_issued_type": "Issued"}]}, "item_10005_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We investigated the effect of nitrogen concentration of 4H-SiC epilayer on the near-infrared (NIR) photoluminescence (PL) intensities from nitrogen-vacancy (NV) centers and found that the NIR-PL emission increased with increasing N concentration. It can be concluded that the effects of irradiation fluence on PL intensity of NV centres in SiC strongly depends on the primary N concentration. ", "subitem_description_type": "Abstract"}]}, "item_10005_description_6": {"attribute_name": "会議概要(会議名, 開催地, 会期, 主催者等)", "attribute_value_mlt": [{"subitem_description": "International Conference on Silicon Carbide and Related Materials 2019", "subitem_description_type": "Other"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Narahara, Takuma"}], "nameIdentifiers": [{"nameIdentifier": "822783", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sato, Shinichiro"}], "nameIdentifiers": [{"nameIdentifier": "822784", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kojima, Kazutoshi"}], "nameIdentifiers": [{"nameIdentifier": "822785", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamazaki, Yuichi"}], "nameIdentifiers": [{"nameIdentifier": "822786", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hijikata, Yasuto"}], "nameIdentifiers": [{"nameIdentifier": "822787", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi"}], "nameIdentifiers": [{"nameIdentifier": "822788", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Narahara, Takuma", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "822789", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sato, Shinichiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "822790", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamazaki, Yuichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "822791", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohshima, Takeshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "822792", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "conference object", "resourceuri": "http://purl.org/coar/resource_type/c_c94f"}]}, "item_title": "Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC"}]}, "item_type_id": "10005", "owner": "1", "path": ["28"], "permalink_uri": "https://repo.qst.go.jp/records/77613", "pubdate": {"attribute_name": "公開日", "attribute_value": "2019-11-15"}, "publish_date": "2019-11-15", "publish_status": "0", "recid": "77613", "relation": {}, "relation_version_is_last": true, "title": ["Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC"], "weko_shared_id": -1}
Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC
https://repo.qst.go.jp/records/77613
https://repo.qst.go.jp/records/77613b07b3e93-17bc-4752-9e13-8f0f89cf63a8
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2019-11-15 | |||||
タイトル | ||||||
タイトル | Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Narahara, Takuma
× Narahara, Takuma× Sato, Shinichiro× Kojima, Kazutoshi× Yamazaki, Yuichi× Hijikata, Yasuto× Ohshima, Takeshi× Narahara, Takuma× Sato, Shinichiro× Yamazaki, Yuichi× Ohshima, Takeshi |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We investigated the effect of nitrogen concentration of 4H-SiC epilayer on the near-infrared (NIR) photoluminescence (PL) intensities from nitrogen-vacancy (NV) centers and found that the NIR-PL emission increased with increasing N concentration. It can be concluded that the effects of irradiation fluence on PL intensity of NV centres in SiC strongly depends on the primary N concentration. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | International Conference on Silicon Carbide and Related Materials 2019 | |||||
発表年月日 | ||||||
日付 | 2019-10-01 | |||||
日付タイプ | Issued |