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Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC
https://repo.qst.go.jp/records/77613
https://repo.qst.go.jp/records/77613b07b3e93-17bc-4752-9e13-8f0f89cf63a8
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-11-15 | |||||
| タイトル | ||||||
| タイトル | Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Narahara, Takuma
× Narahara, Takuma× Sato, Shinichiro× Kojima, Kazutoshi× Yamazaki, Yuichi× Hijikata, Yasuto× Ohshima, Takeshi× Narahara, Takuma× Sato, Shinichiro× Yamazaki, Yuichi× Ohshima, Takeshi |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigated the effect of nitrogen concentration of 4H-SiC epilayer on the near-infrared (NIR) photoluminescence (PL) intensities from nitrogen-vacancy (NV) centers and found that the NIR-PL emission increased with increasing N concentration. It can be concluded that the effects of irradiation fluence on PL intensity of NV centres in SiC strongly depends on the primary N concentration. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | International Conference on Silicon Carbide and Related Materials 2019 | |||||
| 発表年月日 | ||||||
| 日付 | 2019-10-01 | |||||
| 日付タイプ | Issued | |||||
