{"created":"2023-05-15T14:57:11.630330+00:00","id":77613,"links":{},"metadata":{"_buckets":{"deposit":"6e17a62d-b403-4937-b5ac-4fe686af70d9"},"_deposit":{"created_by":1,"id":"77613","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77613"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077613","sets":["10:28"]},"author_link":["822792","822783","822790","822791","822786","822784","822789","822788","822785","822787"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-10-01","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We investigated the effect of nitrogen concentration of 4H-SiC epilayer on the near-infrared (NIR) photoluminescence (PL) intensities from nitrogen-vacancy (NV) centers and found that the NIR-PL emission increased with increasing N concentration. It can be concluded that the effects of irradiation fluence on PL intensity of NV centres in SiC strongly depends on the primary N concentration. ","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"International Conference on Silicon Carbide and Related Materials 2019","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Narahara, Takuma"}],"nameIdentifiers":[{"nameIdentifier":"822783","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro"}],"nameIdentifiers":[{"nameIdentifier":"822784","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kojima, Kazutoshi"}],"nameIdentifiers":[{"nameIdentifier":"822785","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"822786","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hijikata, Yasuto"}],"nameIdentifiers":[{"nameIdentifier":"822787","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"822788","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Narahara, Takuma","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822789","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822790","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822791","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822792","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-11-15"},"publish_date":"2019-11-15","publish_status":"0","recid":"77613","relation_version_is_last":true,"title":["Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:15:56.008768+00:00"}