@misc{oai:repo.qst.go.jp:00077613,
 author = {Narahara, Takuma and Sato, Shinichiro and Kojima, Kazutoshi and Yamazaki, Yuichi and Hijikata, Yasuto and Ohshima, Takeshi and Narahara, Takuma and Sato, Shinichiro and Yamazaki, Yuichi and Ohshima, Takeshi},
 month = {Oct},
 note = {We investigated the effect of nitrogen concentration of 4H-SiC epilayer on the near-infrared (NIR) photoluminescence (PL) intensities from nitrogen-vacancy (NV) centers and found that the NIR-PL emission increased with increasing N concentration. It can be concluded that the effects of irradiation fluence on PL intensity of NV centres in SiC strongly depends on the primary N concentration., International Conference on Silicon Carbide and Related Materials 2019},
 title = {Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC},
 year = {2019}
}