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Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs
https://repo.qst.go.jp/records/77086
https://repo.qst.go.jp/records/77086a0a813e8-a34c-4234-879c-593ac0653e7a
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-10-07 | |||||
| タイトル | ||||||
| タイトル | Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Nakada, Y.
× Nakada, Y.× Kuboyama, S.× Mizuta, E.× Takeyama, Akinori× Ohshima, Takeshi× Shindou, H.× Takeyama, Akinori× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | It was found that the behavior of damage sites introduced by Single-Event Gate Ruptures (SEGRs) in Silicon Carbide (SiC) vertical power Metal- Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) were essentially different from the one observed in corresponding Si devices, although the electrical behavior was similarly modeled. |
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| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | European Conference on Radiation and its Effects on Components and Systems (RADECS2019) | |||||
| 発表年月日 | ||||||
| 日付 | 2019-09-17 | |||||
| 日付タイプ | Issued | |||||
