@misc{oai:repo.qst.go.jp:00077086,
 author = {Nakada, Y. and Kuboyama, S. and Mizuta, E. and Takeyama, Akinori and Ohshima, Takeshi and Shindou, H. and Takeyama, Akinori and Ohshima, Takeshi},
 month = {Sep},
 note = {It was found that the behavior of damage sites introduced by Single-Event Gate Ruptures (SEGRs) in Silicon Carbide (SiC) vertical power Metal-
Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) were essentially different from the one observed in corresponding Si devices, although the
electrical behavior was similarly modeled., European Conference on Radiation and its Effects on Components and Systems (RADECS2019)},
 title = {Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs},
 year = {2019}
}