{"created":"2023-05-15T14:56:48.030970+00:00","id":77086,"links":{},"metadata":{"_buckets":{"deposit":"92f9a23a-e378-4349-990c-433f07da8462"},"_deposit":{"created_by":1,"id":"77086","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77086"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077086","sets":["10:28"]},"author_link":["792747","792751","792748","792750","792752","792753","792746","792749"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-09-17","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":" It was found that the behavior of damage sites introduced by Single-Event Gate Ruptures (SEGRs) in Silicon Carbide (SiC) vertical power Metal-\nOxide-Semiconductor Field-Effect-Transistors (MOSFETs) were essentially different from the one observed in corresponding Si devices, although the\nelectrical behavior was similarly modeled.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"European Conference on Radiation and its Effects on Components and Systems (RADECS2019)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakada, Y."}],"nameIdentifiers":[{"nameIdentifier":"792746","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuboyama, S."}],"nameIdentifiers":[{"nameIdentifier":"792747","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mizuta, E."}],"nameIdentifiers":[{"nameIdentifier":"792748","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori"}],"nameIdentifiers":[{"nameIdentifier":"792749","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"792750","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shindou, H."}],"nameIdentifiers":[{"nameIdentifier":"792751","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"792752","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"792753","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-10-07"},"publish_date":"2019-10-07","publish_status":"0","recid":"77086","relation_version_is_last":true,"title":["Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:58:58.784105+00:00"}