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Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors
https://repo.qst.go.jp/records/76554
https://repo.qst.go.jp/records/765545e29b7d8-a179-41dc-afe1-b148f25efd09
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-08-23 | |||||
| タイトル | ||||||
| タイトル | Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Hasebe, Fumiaki
× Hasebe, Fumiaki× Meguro, Tatsuya× Makino, Takahiro× Ohshima, Takeshi× Tanaka, Yasunori× Shin-Ichiro, Kuroki× Makino, Takahiro× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | 4H-SiC and SOI substrates were bonded by SiO2-SiO2 direct bonding method with diluted HF solution (0.5 wt.%). After the bonding process, the handle layer and the BOX layer of the SOI substrate were etched by TMAH solution, and finally the silicon active layer with a thickness of 1.5 μm was remained on the 4H-SiC substrate. Using this silicon layer, Si photodiodes on 4H-SiC for the radiation hardened image sensors were fabricated and demonstrated. | |||||
| 書誌情報 |
Materials Science Forum 巻 963, p. 726-729, 発行日 2019-07 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.963.726 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.scientific.net/MSF.963.726 | |||||
