@inproceedings{oai:repo.qst.go.jp:00076554,
 author = {Hasebe, Fumiaki and Meguro, Tatsuya and Makino, Takahiro and Ohshima, Takeshi and Tanaka, Yasunori and Shin-Ichiro, Kuroki and Makino, Takahiro and Ohshima, Takeshi},
 book = {Materials Science Forum},
 month = {Jul},
 note = {4H-SiC and SOI substrates were bonded by SiO2-SiO2 direct bonding method with diluted HF solution (0.5 wt.%). After the bonding process, the handle layer and the BOX layer of the SOI substrate were etched by TMAH solution, and finally the silicon active layer with a thickness of 1.5 μm was remained on the 4H-SiC substrate. Using this silicon layer, Si photodiodes on 4H-SiC for the radiation hardened image sensors were fabricated and demonstrated.},
 pages = {726--729},
 title = {Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors},
 volume = {963},
 year = {2019}
}