{"created":"2023-05-15T14:56:21.694012+00:00","id":76554,"links":{},"metadata":{"_buckets":{"deposit":"03ea079a-df35-4d0c-b125-cf569f52ee3b"},"_deposit":{"created_by":1,"id":"76554","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76554"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076554","sets":["2"]},"author_link":["849053","849049","849052","849051","849048","849050","849047","849046"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"729","bibliographicPageStart":"726","bibliographicVolumeNumber":"963","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"4H-SiC and SOI substrates were bonded by SiO2-SiO2 direct bonding method with diluted HF solution (0.5 wt.%). After the bonding process, the handle layer and the BOX layer of the SOI substrate were etched by TMAH solution, and finally the silicon active layer with a thickness of 1.5 μm was remained on the 4H-SiC substrate. Using this silicon layer, Si photodiodes on 4H-SiC for the radiation hardened image sensors were fabricated and demonstrated.","subitem_description_type":"Abstract"}]},"item_10003_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.963.726","subitem_relation_type_select":"DOI"}}]},"item_10003_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.scientific.net/MSF.963.726","subitem_relation_type_select":"URI"}}]},"item_10003_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hasebe, Fumiaki"}],"nameIdentifiers":[{"nameIdentifier":"849046","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Meguro, Tatsuya"}],"nameIdentifiers":[{"nameIdentifier":"849047","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"849048","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"849049","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanaka, Yasunori"}],"nameIdentifiers":[{"nameIdentifier":"849050","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shin-Ichiro, Kuroki"}],"nameIdentifiers":[{"nameIdentifier":"849051","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"849052","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"849053","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-08-23"},"publish_date":"2019-08-23","publish_status":"0","recid":"76554","relation_version_is_last":true,"title":["Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:32:02.880799+00:00"}