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Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
https://repo.qst.go.jp/records/76553
https://repo.qst.go.jp/records/7655380fb2c42-d521-438f-a796-f31eebc909f6
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-08-23 | |||||
| タイトル | ||||||
| タイトル | Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Ishii, Tomoyasu
× Ishii, Tomoyasu× Shin-Ichiro, Kuroki× Sezaki, Hiroshi× Ishikawa, Seiji× Maeda, Tomonori× Makino, Takahiro× Ohshima, Takeshi× Mikael, Östling× Carl-Mikael, Zetterling× Takahiro, Makino× Takeshi, Ohshima |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Sub-micron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects would be induced at the short-channel devices. In this paper, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved. |
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| 書誌情報 |
Materials Science Forum 巻 963, p. 613-616, 発行日 2019-07 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.963.613 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.scientific.net | |||||
