@inproceedings{oai:repo.qst.go.jp:00076553,
 author = {Ishii, Tomoyasu and Shin-Ichiro, Kuroki and Sezaki, Hiroshi and Ishikawa, Seiji and Maeda, Tomonori and Makino, Takahiro and Ohshima, Takeshi and Mikael, Östling and Carl-Mikael, Zetterling and Takahiro, Makino and Takeshi, Ohshima},
 book = {Materials Science Forum},
 month = {Jul},
 note = {Sub-micron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC
integrated circuits. However, the short channel effects would be induced at the short-channel devices. In this paper, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.},
 pages = {613--616},
 publisher = {Trans Tech Publications},
 title = {Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs},
 volume = {963},
 year = {2019}
}