{"created":"2023-05-15T14:56:21.650192+00:00","id":76553,"links":{},"metadata":{"_buckets":{"deposit":"c97c218d-de3d-4ef0-8399-7382e40a0105"},"_deposit":{"created_by":1,"id":"76553","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76553"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076553","sets":["2"]},"author_link":["920886","920889","920892","920885","920883","920882","920890","920891","920884","920887","920888"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"616","bibliographicPageStart":"613","bibliographicVolumeNumber":"963","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Sub-micron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC\nintegrated circuits. However, the short channel effects would be induced at the short-channel devices. In this paper, short channel effects were investigated with planar and trench 4H-SiC MOSFETs, and the suppression of the short channel effect with the trench structure was achieved.","subitem_description_type":"Abstract"}]},"item_10003_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_10003_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.963.613","subitem_relation_type_select":"DOI"}}]},"item_10003_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.scientific.net","subitem_relation_type_select":"URI"}}]},"item_10003_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ishii, Tomoyasu"}],"nameIdentifiers":[{"nameIdentifier":"920882","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shin-Ichiro, Kuroki"}],"nameIdentifiers":[{"nameIdentifier":"920883","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sezaki, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"920884","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishikawa, Seiji"}],"nameIdentifiers":[{"nameIdentifier":"920885","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Maeda, Tomonori"}],"nameIdentifiers":[{"nameIdentifier":"920886","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"920887","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"920888","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mikael, Östling"}],"nameIdentifiers":[{"nameIdentifier":"920889","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Carl-Mikael, Zetterling"}],"nameIdentifiers":[{"nameIdentifier":"920890","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"920891","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"920892","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-08-23"},"publish_date":"2019-08-23","publish_status":"0","recid":"76553","relation_version_is_last":true,"title":["Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:51:29.970252+00:00"}