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Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer
https://repo.qst.go.jp/records/76534
https://repo.qst.go.jp/records/765341f3c2e53-713e-48f0-9003-8612f5b8b06a
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-08-21 | |||||
| タイトル | ||||||
| タイトル | Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Muraok, Kosuke
× Muraok, Kosuke× Sezak, Hiroshi× Ishikawa, Seiji× Maeda, Tomonori× Makino, Takahiro× Takeyama, Akinori× Ohshima, Takeshi× Shin-Ichiro Kuroki× Makino, Takahiro× Takeyama, Akinori× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | 4H-SiC n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with a Ba-silicate interface layer were irradiated with gamma-rays up to 850 kGy at room temperature. Above 600 kGy, the field effect mobility increased from 12 to 18 cm2 V−1 s−1. The narrower channel in the NMOSFETs enhanced radiation responses, such as mobility enhancement and threshold voltage shift. These results indicate that the edge of the channel significantly modifies the electrical characteristics. |
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| 書誌情報 |
Japanese Journal of Applied Physics 巻 58, 号 8, p. 081007-1-081007-7, 発行日 2019-08 |
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| 出版者 | ||||||
| 出版者 | IOP Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0021-4922 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.7567/1347-4065/ab2dab | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://iopscience.iop.org/article/10.7567/1347-4065/ab2dab | |||||
